Analysis of Temperature Dependent Effects on <italic>I&#x2013;V</italic> Characteristics of Heterostructure Tunnel Field Effect Transistors

Abstract

This paper provides an analysis of the intrinsic factors influencing the temperature dependence of the Id-Vds-Vgs characteristics of heterostructure Tunnel FETs based on GaSb/InAs tunneling junctions. The temperature dependence of energy bandgap, quantum confinement energy-shifts, and fermi-level position are quantified. There is significant cancellation among the various effects, such that the overall Id - Vds - Vgs characteristics are expected to have remarkably small temperature dependence, of the order of 10 - 20 mV shift in Vgs over the temperature range of 0 - 125 °C. Considerations are also discussed for representative extrinsic effects such as trap-assisted tunneling, which affect many experimental devices to a variable extent.

Keywords

• Heterojunction tunnel FET
• temperature dependence