Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

Yijun Shi; Wanjun Chen; Zhiwei Fu; Si Chen; Bo Zhang

doi:10.1109/JEDS.2021.3085886

IEEE Journal of the Electron Devices Society (Jan 2021)

Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

Yijun Shi,
Wanjun Chen,
Zhiwei Fu,
Si Chen,
Bo Zhang

Affiliations

Yijun Shi: ORCiD; Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China
Wanjun Chen: ORCiD; Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China
Zhiwei Fu: ORCiD; Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China
Si Chen: Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China
Bo Zhang: ORCiD; Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China

DOI: https://doi.org/10.1109/JEDS.2021.3085886
Journal volume & issue: Vol. 9
pp. 606 – 611

Abstract

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In this work, the influence of the acceptor-type trap on the threshold voltage and short-channel effect is analyzed and modeled for the short-channel GaN MOS-HEMT. Particularly, the analysis and modeling are carried out with the dependences of the traps’ ionization condition on the gate voltage and drain voltage considered. From the calculated results based on the proposed threshold voltage model, it is found that both the interface acceptor-type trap and buffer acceptor-type trap play a vital role in the threshold voltage reduction for the short-channel AlGaN/GaN MOS-HEMT, due to the acceptor-type trap’s detrapping effect induced by the drain voltage. The calculated results are well supported by the numerical simulation, which verified the correctness and accuracy of the presented model.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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