Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C

Abstract

A novel 1500°C gate oxidation process has been demonstrated on Si face of 4H-SiC. Lateral channel metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this process have a maximum field effect mobility of approximately 40 cm\2 V-1 s-1 without post oxidation passivation. This is substantially higher than other reports of MOSFETs with thermally grown oxides (typically grown at the standard silicon temperature range of 1100-1200°C). This result shows the potential of a high temperature oxidation step for reducing the channel resistance (thus the overall conduction loss), in power 4H-SiC MOSFETs.