New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

Kunfeng Zhu; Peijian Zhang; Zicheng Xu; Tao Wang; Xiaohui Yi; Min Hong; Yonghui Yang; Guangsheng Zhang; Jian Liu; Jianan Wei; Yang Pu; Dong Huang; Ting Luo; Xian Chen; Xinyue Tang; Kaizhou Tan; Wensuo Chen

doi:10.1109/JEDS.2023.3239341

IEEE Journal of the Electron Devices Society (Jan 2023)

New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

Kunfeng Zhu,
Peijian Zhang,
Zicheng Xu,
Tao Wang,
Xiaohui Yi,
Min Hong,
Yonghui Yang,
Guangsheng Zhang,
Jian Liu,
Jianan Wei,
Yang Pu,
Dong Huang,
Ting Luo,
Xian Chen,
Xinyue Tang,
Kaizhou Tan,
Wensuo Chen

Affiliations

Kunfeng Zhu: Semiconductor Manufacturing Process Development Department, Sichuan Institute of Solid-state Circuits, Chongqing, China
Peijian Zhang: ORCiD; Science and Technology on Analog Integrated Circuit Laboratory, Chongqing, China
Zicheng Xu: ORCiD; Glasgow College, University of Electronic Science and Technology of China, Chengdu, China
Tao Wang: Semiconductor Manufacturing Process Development Department, Sichuan Institute of Solid-state Circuits, Chongqing, China
Xiaohui Yi: Science and Technology on Analog Integrated Circuit Laboratory, Chongqing, China
Min Hong: Science and Technology on Analog Integrated Circuit Laboratory, Chongqing, China
Yonghui Yang: Semiconductor Manufacturing Process Development Department, Sichuan Institute of Solid-state Circuits, Chongqing, China
Guangsheng Zhang: Semiconductor Manufacturing Process Development Department, Sichuan Institute of Solid-state Circuits, Chongqing, China
Jian Liu: Semiconductor Manufacturing Process Development Department, Sichuan Institute of Solid-state Circuits, Chongqing, China
Jianan Wei: ORCiD; Science and Technology on Analog Integrated Circuit Laboratory, Chongqing, China
Yang Pu: Science and Technology on Analog Integrated Circuit Laboratory, Chongqing, China
Dong Huang: Semiconductor Manufacturing Process Development Department, Sichuan Institute of Solid-state Circuits, Chongqing, China
Ting Luo: Science and Technology on Analog Integrated Circuit Laboratory, Chongqing, China
Xian Chen: Science and Technology on Analog Integrated Circuit Laboratory, Chongqing, China
Xinyue Tang: Science and Technology on Analog Integrated Circuit Laboratory, Chongqing, China
Kaizhou Tan: Science and Technology on Analog Integrated Circuit Laboratory, Chongqing, China
Wensuo Chen: ORCiD; State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing, China

DOI: https://doi.org/10.1109/JEDS.2023.3239341
Journal volume & issue: Vol. 11
pp. 30 – 35

Abstract

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Low frequency (LF) noise is a powerful and non-destructive technique for evaluating the oxide-semiconductor interface and an effective evaluating tool in characterizing electronic device’s structure and reliability. In this study, we present a systematic analysis of the striking abnormal 1/f noise behavior of the hot carrier induced defects in highspeed polysilicon emitter bipolar transistors (PE-BJTs) and SiGe HBTs. Here, the comparative results before and after hot carrier degradation reveal that low frequency noise spectra are not correlated with the density and distribution of the interfacial defects, which related to Si dangling bonds reside at the SiO2/Si interface in PE-BJTs and SiGe HBTs.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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