An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation

Abstract

In this paper, a new modeling technique is proposed for extracting small-signal lumped-element equivalent-circuit models for microwave transistors. The proposed procedure is based on using an optimization approach that is improved by targeting a quasi-static behavior as additional objective function rather than only minimizing the error between the simulated and measured scattering parameters. The validity of the developed modeling methodology is successfully demonstrated by considering a 0.25x1000 $\mu \text{m}^{2}$ gallium nitride (GaN) high-electron-mobility transistor (HEMT) as a case study.

Keywords

• GaN HEMT
• non-quasi-static effects
• scattering parameter measurements
• semiconductor device modeling
• silicon carbide substrate