Superior Turn-Off dV/dt Controllability From Suppression of Dynamic Avalanche in 3300V Scaled IGBTs

Abstract

Systematic comparison of dynamic performance has been made among 3300V scaled IGBTs with scaling factor (k) from 1 to 10 by TCAD simulations. The results from a new evaluation method demonstrate superior turn-off dV/dt controllability in scaled IGBTs, regardless of stronger Injection Enhancement (IE) effect. On the basis of physical reason analysis, including the extraction of extra energy and charge quantity generated from impact ionization, it’s convinced that Dynamic Avalanche (DA) is suppressed in scaled IGBTs successfully. Thus IGBT scaling method is proven to be able to break through the trade-off relationships between lower on-state voltage drop and better switching controllability, also lower switching power loss.

Keywords

• IGBT
• scaling
• TCAD simulation
• dynamic avalanche
• switching controllability