IEEE Journal of the Electron Devices Society (Jan 2016)

Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate

  • Seok-Woo Lee,
  • Chang Bum Park,
  • Pyo Jin Jeon,
  • Sung-Wook Min,
  • June Yeong Lim,
  • Han Sol Lee,
  • Jae-Sung Yoo,
  • Soon Sung Yoo,
  • Seongil Im

DOI
https://doi.org/10.1109/JEDS.2015.2493561
Journal volume & issue
Vol. 4, no. 1
pp. 7 – 10

Abstract

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We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.

Keywords