Physical Modeling of <italic>p</italic>-Type Fluorinated Al-Doped Tin-Oxide Thin Film Transistors

Abstract

Fabrication, physical modeling and dynamic response of p-type Al-doped SnOx active channel thin film transistors (TFTs) are presented for the potential application of ultra-high definition (UHD) displays. After deposition of Al-doped SnOx active layer using reactive co-sputtering, the channel was treated with plasma fluorination which improve the device performance of high ION/IOFF ratio of > 106, low subthreshold swing of ~100 mV/dec and high field-effect mobility (μFE) of 4.8 cm2V-1s-1. To understand the origin of such high performance, physical modeling and numerical simulations were performed using density of state (DOS) model of defects/traps of oxide semiconductor. This model describes the modifications of donor-like tail states and acceptor-like Gaussian defect states due to Al doping on SnOx and fluorine treatment. To evaluate the device performance for UHD large scale displays, the dynamic responses of p-type TFT pixel circuit for various requirements are simulated with physical models. These results suggest that the Al-doped SnOx TFTs are potential candidates for future high-definition displays and many applications in transparent electronics.

Keywords

• Thin film transistors (TFTs)
• ₓ%22%2C%22default_operator%22%3A%22AND%22%7D%7D%7D"> Al doped SnO<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">ₓ</italic>
• plasma fluorination
• density of states (DOS)
• dynamic response