Amorphous IGZO Thin-Film Transistor Gate Driver in Array for Ultra-Narrow Border Displays

Liufei Zhou; Xiaojun Guo; Bang Ouyang; Li'Ang Deng; Mingxin Wang; Qungang Ma; Baoping Wang

doi:10.1109/JEDS.2022.3164887

IEEE Journal of the Electron Devices Society (Jan 2022)

Amorphous IGZO Thin-Film Transistor Gate Driver in Array for Ultra-Narrow Border Displays

Liufei Zhou,
Xiaojun Guo,
Bang Ouyang,
Li'Ang Deng,
Mingxin Wang,
Qungang Ma,
Baoping Wang

Affiliations

Liufei Zhou: School of Electronic Science and Engineering, Southeast University, Nanjing, China
Xiaojun Guo: ORCiD; School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
Bang Ouyang: ORCiD; School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
Li'Ang Deng: ORCiD; School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
Mingxin Wang: School of Electronic Science and Engineering, Southeast University, Nanjing, China
Qungang Ma: ORCiD; Research and Development Center, Nanjing CEC Panda LCD Technology Company Ltd, Nanjing, China
Baoping Wang: School of Electronic Science and Engineering, Southeast University, Nanjing, China

DOI: https://doi.org/10.1109/JEDS.2022.3164887
Journal volume & issue: Vol. 10
pp. 351 – 355

Abstract

Read online

A gate driver in array (GIA) design based on the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) is developed for narrow border displays. In the design, each TFT in the gate driver circuits is divided into a certain number of smaller size devices, which can be placed in different subpixels. Therefore, the pixel aperture ratio loss is minimized, and uniform placement of the gate driver circuits over the pixel array area is able to be achieved. The proposed step-like repeating block structure further reduces the occupied area of the signal interconnects. A 12.4-inch fringe field switching (FFS) liquid crystal display (LCD) panel of ultra-narrow border (0.5 mm) is demonstrated with reliable operation based on this GIA design, proving its potential for practical applications.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

About the journal

Abstract

Keywords