The Endurance and Reliability Mechanisms Investigation of InGaZnO and InSnO Thin Film Transistors

Abstract

Amorphous oxide semiconductor-thin film transistors (AOS-TFTs) have attracted considerable attention due to their impressive performance in various applications. However, there is a limited amount of study available on the reliability of AOS-TFTs. This work investigates the endurance and reliability mechanisms of Indium Gallium Zinc Oxide (IGZO) and Indium Tin Oxide (ITO) TFTs. The devices underwent a range of test conditions to evaluate their endurance properties. The study utilized Zero-Bias Endurance Tests (ZBET) to examine the fluctuating behaviors of threshold voltage, revealing valuable insights into the causes of electrical instability. The study highlights the crucial importance of electron depletion and restoration dynamics in affecting the reliability of TFTs. Additionally, the study found differences in the performance of IGZO-TFTs and ITO-TFTs, suggesting that the differing features of the materials have a significant impact on the endurance and reliability of TFTs.

Keywords

• InGaZnO thin film transistor
• InSnO thin film transistor
• endurance test
• electron depletion and restoration