Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET

Abstract

Forward back biasing (FBB) technique is considered as a potential solution for aging compensation in silicon on insulator (SOI) MOSFET. However, traditional SOI devices under FBB would suffer from extra off-state leakage current $(I_{\mathrm{ off}})$ and undesirable static power consumption. In this work, we studied the hot carrier degradation and FBB compensation in $\pi $ -GAA- $\pi $ MOSFET. With the unique hybrid gate structure, the performance degradation is found to be less severe than pure $\pi $ gate device; and moreover it can be partially recovered by FBB without the sacrifice of $I_{\mathrm{ off}}$ . The presence of $\pi $ gates offer the back gate tunability that is not provided by pure GAA gate; while the GAA gate component can effectively prevent the impact of FBB from affecting the surface potential. Our findings in $\pi $ -GAA- $\pi $ hybrid gate MOSFETs would be beneficial for device reliability improvement.

Keywords

• technique
• aging compensation
• hot carrier degradation
• off-state leakage current