Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT

Jun Wu; Lin-Qing Zhang; Yao Yao; Min-Zhi Lin; Zhi-Yuan Ye; Peng-Fei Wang

doi:10.1109/JEDS.2017.2647979

IEEE Journal of the Electron Devices Society (Jan 2017)

Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT

Jun Wu,
Lin-Qing Zhang,
Yao Yao,
Min-Zhi Lin,
Zhi-Yuan Ye,
Peng-Fei Wang

Affiliations

Jun Wu: ORCiD; Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Lin-Qing Zhang: ORCiD; Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Yao Yao: Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Min-Zhi Lin: Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Zhi-Yuan Ye: Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Peng-Fei Wang: Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China

DOI: https://doi.org/10.1109/JEDS.2017.2647979
Journal volume & issue: Vol. 5, no. 2
pp. 117 – 121

Abstract

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In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (Vth) during switching was observed. This dynamic Vth behavior of SFG device is because of the special device structure of SFG transistors. Based on the Vth-programmable behavior of the SFG transistor, a SFG-based GaN high electron mobility transistor was proposed and enhancement-mode was realized with writing-0 into the transistor during every switching operation by simulation.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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