Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating

Kaname Imokawa; Takayuki Kurashige; Akira Suwa; Daisuke Nakamura; Taizoh Sadoh; Tetsuya Goto; Hiroshi Ikenoue

doi:10.1109/JEDS.2019.2956991

IEEE Journal of the Electron Devices Society (Jan 2020)

Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating

Kaname Imokawa,
Takayuki Kurashige,
Akira Suwa,
Daisuke Nakamura,
Taizoh Sadoh,
Tetsuya Goto,
Hiroshi Ikenoue

Affiliations

Kaname Imokawa: ORCiD; Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, Japan
Takayuki Kurashige: Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, Japan
Akira Suwa: Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, Japan
Daisuke Nakamura: Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, Japan
Taizoh Sadoh: ORCiD; Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, Japan
Tetsuya Goto: ORCiD; New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan
Hiroshi Ikenoue: Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, Japan

DOI: https://doi.org/10.1109/JEDS.2019.2956991
Journal volume & issue: Vol. 8
pp. 27 – 32

Abstract

Read online

We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H3PO4 solution and Al2O3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 1019 cm-3 in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

About the journal

Abstract

Keywords