IEEE Journal of the Electron Devices Society (Jan 2018)
High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al<sub>0.17</sub>Ga<sub>0.83</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N Barrier Layers Design
Abstract
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed. Compared to the standard (STD) p-GaN/AlGaN/GaN HEMT structure, the composite barriers (CB) with AlN etchstop layer can effectively improve the uniformity of the device threshold voltage (VTH) and reduce the leakage current. The CB p-GaN gate HEMT achieved a VTH of 1.7 ± 0.06 V; this value was 2.1 ± 0.2 V for STD HEMT. In addition, the off-state drain leakage current was suppressed one order of magnitude by adopting a composite barrier design.
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