IEEE Journal of the Electron Devices Society (Jan 2022)

BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions

  • R. Alcala,
  • M. Materano,
  • P. D. Lomenzo,
  • L. Grenouillet,
  • T. Francois,
  • J. Coignus,
  • N. Vaxelaire,
  • C. Carabasse,
  • S. Chevalliez,
  • F. Andrieu,
  • T. Mikolajick,
  • U. Schroeder

DOI
https://doi.org/10.1109/JEDS.2022.3198138
Journal volume & issue
Vol. 10
pp. 907 – 912

Abstract

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Si doped HfO2 based ferroelectric capacitors integrated into Back-End-Of-Line (BEOL) 130 nm CMOS technology were investigated in regard to critical reliability parameters for their implementation in non-volatile one-transistor one-capacitor ferroelectric random-access memory applications. The assessed reliability parameters are electric field, capacitor area, and temperature and are evaluated on single and parallel structured capacitors to understand their respective impact on wake-up, fatigue, imprint, and retention.

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