IEEE Journal of the Electron Devices Society (Jan 2023)

A High 5292-PPI Pixel Circuit for Micro Displays With 10-Bit Gray Levels Realized via the Technique of Analog Sub-Frame Integral

  • Shih-Song Cheng,
  • Paul C.-P. Chao

DOI
https://doi.org/10.1109/JEDS.2023.3308194
Journal volume & issue
Vol. 11
pp. 456 – 466

Abstract

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A pixel circuit driven in small range of data voltage $(V_{data})$ is proposed for high pixel-per-inch (PPI) micro displays, using the new driving technique of analog sub-frame integral (A-SFI) to realize the required current integrals of gray levels. This circuit runs with two analog $V_{data}$ ’s configurated by 7-bit digital-to-analog converters (DACs), outputting 10-bit integral currents by receiving a digital voltage of $V_{sel}$ at each sub-frame that is one of eight (3-bit) equally divided from an illuminating period. With the 1-LSB of 5mV assumed, the estimated $V_{data}$ range of 0.64V, which is apparently lower than at least 5V of a conventional circuit made by high voltage FETs (HVFETs), assists the proposed circuit in mainly constructing by the low voltage FETs (LVFETs) that are driven by about 1V; therefore, its pixel layout could be shrank for high PPI. Implementing this circuit in a 1.03-inch, high 5292PPI micro OLED panel made via that 55nm CMOS process for the validations, the simulated results over the displaying range show the ${l}$ DNL’s of within +1.15iLSB and −1.01iLSB, the iINL’s of within +1.53iLSB and −1.05iLSB, and the iAD’s of within +1.94% and −1.18%, observed the favorable linearities or deviations to the generated integral currents along 10-bit grayscales. The experimental results show the ${l}$ DNL’s of within $3.12{l}$ LSB and $- 1.75{l}$ LSB, and the ${l}$ INL’s of within $3.35{l}$ LSB and $- 2.29{l}$ LSB, validated the viability of this technique for high PPI displays.

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