Improvement of MoS<sub>2</sub> Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid

Shinya Imai; Ryo Ono; Iriya Muneta; Kuniyuki Kakushima; Tetsuya Tatsumi; Shigetaka Tomiya; Kazuo Tsutsui; Hitoshi Wakabayashi

doi:10.1109/JEDS.2024.3502922

IEEE Journal of the Electron Devices Society (Jan 2025)

Improvement of MoS<sub>2</sub> Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid

Shinya Imai,
Ryo Ono,
Iriya Muneta,
Kuniyuki Kakushima,
Tetsuya Tatsumi,
Shigetaka Tomiya,
Kazuo Tsutsui,
Hitoshi Wakabayashi

Affiliations

Shinya Imai: ORCiD; Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan
Ryo Ono: ORCiD; Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan
Iriya Muneta: ORCiD; Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan
Kuniyuki Kakushima: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan
Tetsuya Tatsumi: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan
Shigetaka Tomiya: ORCiD; Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan
Kazuo Tsutsui: ORCiD; Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan
Hitoshi Wakabayashi: ORCiD; Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan

DOI: https://doi.org/10.1109/JEDS.2024.3502922
Journal volume & issue: Vol. 13
pp. 15 – 23

Abstract

Read online

Lowering the flux of sputtered particles using a molybdenum grid reduced the deposition rate of MoS2 films with an enlargement of the grain size measured by in-plane X-ray diffraction. The MoS2 film crystallinity evaluated by the Raman spectroscopy was improved because the S/Mo ratio was also enhanced by the low-rate sputtering. In addition, the enhancement of the grain size was confirmed from plan-view TEM observations of MoS2 films, consistent with the in-plane XRD results. Therefore, reducing the particle flux during sputtering is expected to contribute to the better-quality MoS2 films for pn-stacked 2D-CMOS devices and human interface devices.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

About the journal

Abstract

Keywords