An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

Johann C. Rode; Han-Wei Chiang; Prateek Choudhary; Vibhor Jain; Brian J. Thibeault; William J. Mitchell; Mark J. W. Rodwell; Miguel Urteaga; Dmitri Loubychev; Andrew Snyder; Ying Wu; Joel M. Fastenau; Amy W. K. Liu

doi:10.1109/JEDS.2014.2363178

IEEE Journal of the Electron Devices Society (Jan 2015)

An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

Johann C. Rode,
Han-Wei Chiang,
Prateek Choudhary,
Vibhor Jain,
Brian J. Thibeault,
William J. Mitchell,
Mark J. W. Rodwell,
Miguel Urteaga,
Dmitri Loubychev,
Andrew Snyder,
Ying Wu,
Joel M. Fastenau,
Amy W. K. Liu

Affiliations

Johann C. Rode: Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA
Han-Wei Chiang: Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA
Prateek Choudhary: Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA
Vibhor Jain: IBM Corporation, Essex Junction, VT, USA
Brian J. Thibeault: Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA
William J. Mitchell: Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA
Mark J. W. Rodwell: Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA
Miguel Urteaga: Teledyne Scientic & Imaging, Thousand Oaks, CA, USA
Dmitri Loubychev: IQE Inc., Bethlehem, OA, USA
Andrew Snyder: IQE Inc., Bethlehem, OA, USA
Ying Wu: IQE Inc., Bethlehem, OA, USA
Joel M. Fastenau: IQE Inc., Bethlehem, OA, USA
Amy W. K. Liu: IQE Inc., Bethlehem, OA, USA

DOI: https://doi.org/10.1109/JEDS.2014.2363178
Journal volume & issue: Vol. 3, no. 1
pp. 54 – 57

Abstract

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We report an InP/InGaAs/InP double heterojunction bipolar transistor fabricated in a triple-mesa structure, exhibiting simultaneous 404 GHz fτ and 901 GHz fmax. The emitter and base contacts were defined by electron beam lithography with better than 10 nm resolution and smaller than 20 nm alignment error. The base-collector junction has been passivated by depositing a SiNx layer prior to benzocyclobutene planarization, improving the open-base breakdown voltage BVCEO from 3.7 to 4.3 V.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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