IEEE Journal of the Electron Devices Society (Jan 2022)

Improved Ferroelectricity in Cryogenic Phase Transition of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>

  • Yifan Xing,
  • Yu-Rui Chen,
  • Jer-Fu Wang,
  • Zefu Zhao,
  • Yun-Wen Chen,
  • Guan-Hua Chen,
  • Yuxuan Lin,
  • Rachit Dobhal,
  • C. W. Liu

DOI
https://doi.org/10.1109/JEDS.2022.3218004
Journal volume & issue
Vol. 10
pp. 996 – 1002

Abstract

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Cryogenic transition from metastable tetragonal phase (t-phase) to orthorhombic phase (o-phase) is crucial in achieving the desired ferroelectric characteristics. Observing the reversible transition from anti-ferroelectricity (AFE) to ferroelectricity (FE) in electrical characteristics, the cryogenic phase transition is experimentally analyzed in Hf0.5Zr0.5O2 alloys. Furthermore, the stabilized o-phase formation is more favorable when applying cryogenics to superlattice Hf0.5Zr0.5O2, manifesting a 23% increase in remanent polarization (Pr) at 77K. To theoretically clarify the emergence of phase transition with decreasing temperatures, Landau–Ginzburg–Devonshire theory and first-principle study are combined in this work. Based on the detailed calculation, the increasing relative free energy of the t-phase contributes to lowering the energy barrier when decreasing the temperature, making the convenient transitional pathway from metastable t- to o-phase. This work exhibits the cryogenic phase transition model involving t- and o-phases in Hf0.5Zr0.5O2 and presents a method to boost ferroelectricity for emerging HfO2-based cryo-device.

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