Emitter-site specificity of hard x-ray photoelectron Kikuchi-diffraction

Abstract

High-resolution full-field imaging of ( k _x , k _y ) photoelectron distributions ( k -resolution 0.03 Å ^−1 , angular resolution 0.03° at 6.7 keV) in a large field of view (up to 16 Å ^−1 dia.) allows to observe fine details in Kikuchi-type diffractograms. Alongside with the element specificity via core-level spectra, this method opens a new avenue to structural analysis using hard x-ray photoelectron diffraction (hXPD). Here we present a theoretical study of the emitter-site specificity by simulating hXPD patterns for arbitrary positions of emitter atoms in the unit cell. Using the Bloch wave approach to photoelectron diffraction from lattice planes, the diffraction patterns from a number of positions in the unit cell can be obtained simultaneously exploiting the reciprocity theorem. Simulations for dopant atoms and dopant multimers (dimers, trimers, clusters) in the Si lattice at various positions in the unit cell reveal a strong site-sensitivity in terms of dramatic changes in the diffraction patterns with emitter-atom position. The results are compared with measurements for Si hyperdoped with Te.

Keywords

• photoemission
• photoelectron diffraction
• silicon
• interstitial sites
• substitutional sites
• time-of-flight momentum microscopy