Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar

Mengxuan Jiang; Zheng John Shen; Jun Wang; Zhikang Shuai; Xin Yin

doi:10.1109/JEDS.2016.2537828

IEEE Journal of the Electron Devices Society (Jan 2016)

Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar

Mengxuan Jiang,
Zheng John Shen,
Jun Wang,
Zhikang Shuai,
Xin Yin

Affiliations

Mengxuan Jiang: College of Electrical and Information Engineering, Hunan University, Changsha, China
Zheng John Shen: College of Electrical and Information Engineering, Hunan University, Changsha, China
Jun Wang: College of Electrical and Information Engineering, Hunan University, Changsha, China
Zhikang Shuai: College of Electrical and Information Engineering, Hunan University, Changsha, China
Xin Yin: College of Electrical and Information Engineering, Hunan University, Changsha, China

DOI: https://doi.org/10.1109/JEDS.2016.2537828
Journal volume & issue: Vol. 4, no. 3
pp. 144 – 148

Abstract

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This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode. TCAD simulation indicates that the proposed IGBT offers an avalanche energy 32% and reverse-biased safe operating area 20% higher than a conventional field-stop IGBT. Therefore, the proposed IGBT provides more reliable electrical performance for high-power converters.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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