Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors

Abstract

This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The Vth is found to shift negatively when increasing the ID-VG measurement condition VD from 0.1 to 15 V. The current-voltage curves show that this degradation is caused by the effective channel length (Leff) being shorter than the mask channel length (L). Using the transmission line method to extract Leff, we discover that the degradation will be completely suppressed by an annealing treatment. As a result, the degradation mechanism of shorter channel length a-IGZO thin film transistors is due to oxygen-vacancies which are located between the channel and the source/drain junction.

Keywords

• Bottom gate TFTs
• indium gallium zinc oxide (IGZO)
• oxygen vacancy
• drain induced barrier lowing (DIBL)