1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

Abstract

A reverse-blocking AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional MISHEMT with ohmic drain, the proposed device features a hybrid Schottky-ohmic drain with a low work function Tungsten (W), based on which the state-of-the-art ultralow turn-on voltage ( ${V} _{\mathrm{ on}}$ ) of 0.25 V could be realized without degradation in on-state characteristics. In addition, the fabricated RB-MISHEMT exhibits the excellent reverse blocking voltage of −1332 V (at ${V} _{\mathrm{ GS}}= 0$ V) and forward blocking voltage of 1315 V (at ${V} _{\mathrm{ GS}} = -15$ V) with a specific on-resistance ( ${R} _{\mathrm{ on,sp}}$ ) of 3.5 $\text{m}\Omega $ cm2, leading in the highest power figure-of-merit (FOM) of > 494 MW/cm2. The good thermal stability could also be observed in fabricated RB-MISHEMT. The corresponding operation mechanism of RB-MISHEMT are also revealed by Silvaco ATLAS simulations. These results demonstrate the great potential in power electronics applications.

Keywords

• AlGaN/GaN
• HEMT
• reverse blocking
• ultralow turn-on voltage
• hybrid Schottky-ohmic drain with tungsten