Impact of the Incremental Programming Algorithm on the Filament Conduction in HfO₂-Based RRAM Arrays

Abstract

In this paper, the set operation of HfO2 based 1T-1R arrays is studied by applying incremental step pulse with verify algorithm. To evaluate the impact of the voltage step increment on the conduction mechanism of filaments, the voltage increments between consecutive pulses are varied between 0.05 and 0.4 V. The extracted leakage values after the set operation were discussed in the framework of the quantum point contact model. In the so called low resistive state, the conductive filaments demonstrate a defined signature of conductance quantization.

Keywords

• RRAM
• 2%22%2C%22default_operator%22%3A%22AND%22%7D%7D%7D"> HfO<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2</sub>
• QPC model
• programming algorithm