Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold

Yi-Chia Tsai; Blanka Magyari-Kope; Yiming Li; Seiji Samukawa; Yoshio Nishi; Simon M. Sze

doi:10.1109/JEDS.2019.2897167

IEEE Journal of the Electron Devices Society (Jan 2019)

Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold

Yi-Chia Tsai,
Blanka Magyari-Kope,
Yiming Li,
Seiji Samukawa,
Yoshio Nishi,
Simon M. Sze

Affiliations

Yi-Chia Tsai: ORCiD; Department of Electrical and Computer Engineering, Parallel and Scientific Computing Laboratory, Institute of Communications Engineering, National Chiao Tung University, Hsinchu, Taiwan
Blanka Magyari-Kope: ORCiD; Department of Electrical Engineering, Stanford University, Stanford, CA, USA
Yiming Li: ORCiD; Department of Electrical and Computer Engineering, Parallel and Scientific Computing Laboratory, Institute of Communications Engineering, National Chiao Tung University, Hsinchu, Taiwan
Seiji Samukawa: Center for mmWave Smart Radar Systems and Technologies, National Chiao Tung University, Hsinchu, Taiwan
Yoshio Nishi: Department of Electrical Engineering, Stanford University, Stanford, CA, USA
Simon M. Sze: Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan

DOI: https://doi.org/10.1109/JEDS.2019.2897167
Journal volume & issue: Vol. 7
pp. 322 – 328

Abstract

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High contact resistance keeps black phosphorus (BP) from fully wielding its excellent material property. Using first-principles calculations, we analyze the interfacial binding behavior and the impact of binding on the other layers of a trilayer BP. We found that the interfacial charge density and charge transfer of Scandium (Sc)-contacted trilayer BP are 2.67 and 3.29 times greater than Au-contacted trilayer BP, respectively. Moreover, the interfacial tunneling barrier height and width of Sc-contacted trilayer BP are 0 eV and 1.851 Å, which are significantly smaller than that of 5.1 eV and 2.447 Å observed in Au-contacted trilayer BP. All these facts suggest a strong bonding and efficient carrier transmission between Sc contact and trilayer BP substrate. Therefore, we conclude that the Sc electrode can lead to a superior performance that is consistent with the experiment.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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