Sheet Resistance Reduction of MoS&#x2082; Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing

Takuya Hamada; Shigetaka Tomiya; Tetsuya Tatsumi; Masaya Hamada; Taiga Horiguchi; Kuniyuki Kakushima; Kazuo Tsutsui; Hitoshi Wakabayashi

doi:10.1109/JEDS.2021.3050801

IEEE Journal of the Electron Devices Society (Jan 2021)

Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing

Takuya Hamada,
Shigetaka Tomiya,
Tetsuya Tatsumi,
Masaya Hamada,
Taiga Horiguchi,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi

Affiliations

Takuya Hamada: ORCiD; Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan
Shigetaka Tomiya: Research Institute for the Earth Inclusive Sensing, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan
Tetsuya Tatsumi: Research Institute for the Earth Inclusive Sensing, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan
Masaya Hamada: ORCiD; Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan
Taiga Horiguchi: Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan
Kuniyuki Kakushima: Tokyo Institute of Technology, Yokohama, Japan
Kazuo Tsutsui: ORCiD; Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan
Hitoshi Wakabayashi: ORCiD; Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan

DOI: https://doi.org/10.1109/JEDS.2021.3050801
Journal volume & issue: Vol. 9
pp. 278 – 285

Abstract

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Sheet resistance (Rsheet) reduction of a-few-layered molybdenum disulfide (MoS2) film using sputtering is investigated in this study. To enhance the carrier density, chlorine (Cl2) gas excited by inductively coupled plasma is introduced as a substitute for sulfur. To electrically activate the Cl dopants and simultaneously prevent out-diffusion of sulfur, a furnace annealing was performed in sulfur-vapor ambient. Consequently, the Rsheet in the MoS2 film with the Cl2 plasma treatment remarkably reduced by one order lower than that without one, because of the activation of Cl dopants in the MoS2 film.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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