Threshold Switching Characteristics of Nb/NbO<sub>2</sub>/TiN Vertical Devices

Yuhan Wang; Ryan B. Comes; Stuart A. Wolf; Jiwei Lu

doi:10.1109/JEDS.2015.2503922

IEEE Journal of the Electron Devices Society (Jan 2016)

Threshold Switching Characteristics of Nb/NbO<sub>2</sub>/TiN Vertical Devices

Yuhan Wang,
Ryan B. Comes,
Stuart A. Wolf,
Jiwei Lu

Affiliations

Yuhan Wang: Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA
Ryan B. Comes: Pacific Northwest Laboratory, Fundamental and Computational Sciences Directorate, Richland, WA, USA
Stuart A. Wolf: Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA
Jiwei Lu: Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA

DOI: https://doi.org/10.1109/JEDS.2015.2503922
Journal volume & issue: Vol. 4, no. 1
pp. 11 – 14

Abstract

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We have observed threshold switching (TS) with minimal hysteresis and a small threshold electric field (60-90 kV/cm) in Nb/NbO2/TiN structures. The TS was unipolar with certain repeatability. A less sharp but still sizable change in the device resistance can be observed up to 150°C. The TS without Nb capping layer exhibited hysteretic characteristics. It was proposed that the surface Nb2O5 layer on NbO2 could significantly modify the TS in this vertical device. This understanding of the surface effect will allow further control of the non-linear IV characteristics for NbO2-based switches or selector devices.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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