IEEE Journal of the Electron Devices Society (Jan 2020)

Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity

  • Sk Ziaur Rahaman,
  • I-Jung Wang,
  • Ding-Yeong Wang,
  • Chi-Feng Pai,
  • Yu-Chen Hsin,
  • Shan-Yi Yang,
  • Hsin-Han Lee,
  • Yao-Jen Chang,
  • Yi-Ching Kuo,
  • Yi-Hui Su,
  • Guan-Long Chen,
  • Fang-Ming Chen,
  • Jeng-Hua Wei,
  • Tuo-Hung Hou,
  • Shyh-Shyuan Sheu,
  • Chih-I Wu,
  • Duan-Lee Deng

DOI
https://doi.org/10.1109/JEDS.2020.2971892
Journal volume & issue
Vol. 8
pp. 163 – 169

Abstract

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We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. Besides, we present device size-dependent switching current threshold in the proposed SOT-MRAM cell structure. To realize the potential of our fabricated SOT-MRAM, wafer-level uniformity, cycling and temperature dependence SOT switching have been comprehensively investigated. Furthermore, the thermal stability factor ( ${\Delta }$ ) was calculated from temperature-dependence SOT switching to fulfill the thermal stability criteria, i.e., > 10 years of this emerging SOT-MRAM technology.

Keywords