Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems

T. Frahm; M. Buttberg; G. Gvozdev; R. A. Muller; S. Chen; B. Sun; L. Raffauf; S. Menzel; I. Valov; D. Wouters; R. Waser; J. Knoch

doi:10.1109/JEDS.2023.3297855

IEEE Journal of the Electron Devices Society (Jan 2023)

Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems

T. Frahm,
M. Buttberg,
G. Gvozdev,
R. A. Muller,
S. Chen,
B. Sun,
L. Raffauf,
S. Menzel,
I. Valov,
D. Wouters,
R. Waser,
J. Knoch

Affiliations

T. Frahm: ORCiD; Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany
M. Buttberg: Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, Germany
G. Gvozdev: Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, Germany
R. A. Muller: ORCiD; Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany
S. Chen: ORCiD; Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, Germany
B. Sun: ORCiD; Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany
L. Raffauf: Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany
S. Menzel: ORCiD; Peter-Grünberg Institut (PGI-7), Forschungszentrum Jülich GmbH, Juelich, Germany
I. Valov: Peter-Grünberg Institut (PGI-7), Forschungszentrum Jülich GmbH, Juelich, Germany
D. Wouters: ORCiD; Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, Germany
R. Waser: ORCiD; Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, Germany
J. Knoch: ORCiD; Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany

DOI: https://doi.org/10.1109/JEDS.2023.3297855
Journal volume & issue: Vol. 11
pp. 432 – 437

Abstract

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Lateral electrochemical metallization (ECM) cells are fabricated with a combined spacer/damascene process. The process allows the realization of nanoscale geometrical distances between the two electrodes independent of lithography. Such lateral ECM cells are an essential part in a reconfigurable interconnect system that may yield a strongly increased connectivity in artificial neural networks. The lateral cells show memristive properties comparable to vertical cells with switching voltages in the range of −1.5V to 2.5V. The influence of electrode line edge roughness on SET kinetics of such lateral cells is investigated via kinetic Monte Carlo simulations, finding a minor influence on SET time variability.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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