New Journal of Physics (Jan 2020)
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
- Slawomir Prucnal,
- Maciej O Liedke,
- Xiaoshuang Wang,
- Maik Butterling,
- Matthias Posselt,
- Joachim Knoch,
- Horst Windgassen,
- Eric Hirschmann,
- Yonder Berencén,
- Lars Rebohle,
- Mao Wang,
- Enrico Napolitani,
- Jacopo Frigerio,
- Andrea Ballabio,
- Giovani Isella,
- René Hübner,
- Andreas Wagner,
- Hartmut Bracht,
- Manfred Helm,
- Shengqiang Zhou
Affiliations
- Slawomir Prucnal
- ORCiD
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research , Bautzner Landstraße 400, D-01328 Dresden, Germany
- Maciej O Liedke
- ORCiD
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Radiation Physics , Bautzner Landstrasse 400, D-01328 Dresden, Germany
- Xiaoshuang Wang
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research , Bautzner Landstraße 400, D-01328 Dresden, Germany
- Maik Butterling
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Radiation Physics , Bautzner Landstrasse 400, D-01328 Dresden, Germany
- Matthias Posselt
- ORCiD
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research , Bautzner Landstraße 400, D-01328 Dresden, Germany
- Joachim Knoch
- Institut für Halbleitertechnik , RWTH Aachen, Germany
- Horst Windgassen
- Institut für Halbleitertechnik , RWTH Aachen, Germany
- Eric Hirschmann
- ORCiD
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Radiation Physics , Bautzner Landstrasse 400, D-01328 Dresden, Germany
- Yonder Berencén
- ORCiD
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research , Bautzner Landstraße 400, D-01328 Dresden, Germany
- Lars Rebohle
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research , Bautzner Landstraße 400, D-01328 Dresden, Germany
- Mao Wang
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research , Bautzner Landstraße 400, D-01328 Dresden, Germany
- Enrico Napolitani
- ORCiD
- Dipartimento di Fisica e Astronomia, Università di Padova and CNR-IMM MATIS , Via Marzolo 8, I-35131 Padova, Italy
- Jacopo Frigerio
- ORCiD
- L-NESS, Dipartimento di Fisica , Politecnico di Milano, Polo di Como, Via Anzani 42, I-22100 Como, Italy
- Andrea Ballabio
- ORCiD
- L-NESS, Dipartimento di Fisica , Politecnico di Milano, Polo di Como, Via Anzani 42, I-22100 Como, Italy
- Giovani Isella
- ORCiD
- L-NESS, Dipartimento di Fisica , Politecnico di Milano, Polo di Como, Via Anzani 42, I-22100 Como, Italy
- René Hübner
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research , Bautzner Landstraße 400, D-01328 Dresden, Germany
- Andreas Wagner
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Radiation Physics , Bautzner Landstrasse 400, D-01328 Dresden, Germany
- Hartmut Bracht
- Institute of Materials Physics , University of Münster, Wilhelm-Klemm-Str. 10, D-48149 Münster, Germany
- Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research , Bautzner Landstraße 400, D-01328 Dresden, Germany
- Shengqiang Zhou
- ORCiD
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research , Bautzner Landstraße 400, D-01328 Dresden, Germany
- DOI
- https://doi.org/10.1088/1367-2630/abc466
- Journal volume & issue
-
Vol. 22,
no. 12
p. 123036
Abstract
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (D _n V with n ⩽ 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P _4 V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P _4 V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance–voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology.
Keywords
