An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement

Abstract

An extraction method to obtain the noise model parameter $T_{\mathrm { d}}$ in deep submicron MOSFETs directly from radio frequency (RF) scattering parameters and noise figure measurements is presented. A simplified noise equivalent circuit, along with closed-form solutions to calculate the RF noise figure of MOSFET is developed. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for $16\times 1\times 2{{\mu }\rm m}$ (number of gate fingers $\times $ unit gatewidth $\times $ cells) gatelength MOSFETs.

Keywords

• Equivalent circuits
• MOSFET
• parameter extraction
• noise model
• small signal model
• noise figure measurement