WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its <italic>p</italic>MISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

Takuya Hamada; Masaya Hamada; Satoshi Igarashi; Taiga Horiguchi; Iriya Muneta; Kuniyuki Kakushima; Kazuo Tsutsui; Tetsuya Tatsumi; Shigetaka Tomiya; Hitoshi Wakabayashi

doi:10.1109/JEDS.2021.3108882

IEEE Journal of the Electron Devices Society (Jan 2021)

WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its <italic>p</italic>MISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

Takuya Hamada,
Masaya Hamada,
Satoshi Igarashi,
Taiga Horiguchi,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Tetsuya Tatsumi,
Shigetaka Tomiya,
Hitoshi Wakabayashi

Affiliations

Takuya Hamada: ORCiD; Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan
Masaya Hamada: ORCiD; Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan
Satoshi Igarashi: Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan
Taiga Horiguchi: Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan
Iriya Muneta: ORCiD; Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan
Kuniyuki Kakushima: Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan
Kazuo Tsutsui: ORCiD; Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan
Tetsuya Tatsumi: Research Institute for the Earth Inclusive Sensing, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan
Shigetaka Tomiya: Research Institute for the Earth Inclusive Sensing, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan
Hitoshi Wakabayashi: ORCiD; Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, Japan

DOI: https://doi.org/10.1109/JEDS.2021.3108882
Journal volume & issue: Vol. 9
pp. 1117 – 1124

Abstract

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A layered polycrystalline WS2 film is formed by radio-frequency (RF) magnetron sputtering and sulfur-vapor annealing (SVA). Its $p$ MISFET is successfully demonstrated with TiN/HfO2 top-gate stack, TiN contact, and ultra-thin body and box technologies. A WS2 film with a (002) plane is formed parallel to a substrate surface using RF magnetron sputtering, and its crystallinity is drastically enhanced by the SVA. $I$ – $V$ characteristics with $p$ -type operation are confirmed in WS2 MISFETs with a maximum field effect mobility of $1.5\times10$ −2 cm2V−1s−1. Therefore, our film-formation method is a promising candidate for $p$ MOSFETs in CMOS circuits.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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