Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel Transistor

Abstract

We investigate the gate controlled direct band-to-band tunneling (BTBT) current in monolayer transition-metal dichalcogenide (MX2) channel-based tunnel field effect transistor (TFET). Five MX2 materials (MoS2,MoSe2,MoTe2,WS2,WSe2) in their 2-D sheet forms are considered for this purpose. We first study the real and imaginary band structure of those MX2 materials by density-functional theory (DFT), which is then used to evaluate the gate-controlled current under the Wentzel-Kramers-Brillouin (WKB) approximation. It is shown that all five MX2 support direct BTBT in their monolayer sheet forms and offer an average ON current and subthreshold slope of 150 μA/μm (at Vd=0.1 V) and 4 mV/dec, respectively. Furthermore, we also demonstrate the strain effect on the complex band structures and the performances of MX2 based TFETs. It is observed that a certain tensile strain becomes favorable for the improvement of ON-current performances.

Keywords

• Tunnel field effect transistor
• 2-D crystal
• atomistic simulation
• complex band structure
• band-to-band tunneling