High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS<sub>2</sub> Film Using UHV RF Magnetron Sputtering and Sulfurization

Masaya Hamada; Kentaro Matsuura; Takuro Sakamoto; Iriya Muneta; Takuya Hoshii; Kuniyuki Kakushima; Kazuo Tsutsui; Hitoshi Wakabayashi

doi:10.1109/JEDS.2019.2943609

IEEE Journal of the Electron Devices Society (Jan 2019)

High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS<sub>2</sub> Film Using UHV RF Magnetron Sputtering and Sulfurization

Masaya Hamada,
Kentaro Matsuura,
Takuro Sakamoto,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi

Affiliations

Masaya Hamada: ORCiD; Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan
Kentaro Matsuura: ORCiD; Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan
Takuro Sakamoto: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan
Iriya Muneta: ORCiD; Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan
Takuya Hoshii: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan
Kuniyuki Kakushima: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan
Kazuo Tsutsui: ORCiD; Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan
Hitoshi Wakabayashi: ORCiD; Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan

DOI: https://doi.org/10.1109/JEDS.2019.2943609
Journal volume & issue: Vol. 7
pp. 1258 – 1263

Abstract

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A high Hall-effect mobility of 1,250 cm2V1s−1 is achieved in ZrS2 film as a two-dimensional semiconductor. A large-area atomic-layered polycrystalline ZrS2 film was obtained by sputtering and sulfurization. It was confirmed that a layered ZrS2 film on a SiO2/Si substrate was successfully achieved by a high-temperature sputtering and sulfur compensation process. We demonstrated that the Hall-effect mobility and the carrier density were greatly improved to 1,250 cm2V−1s−1 and $8.5 \times 10^{17}$ cm−3, simultaneously. High-mobility two-dimensional ZrS2 film is a strong candidate for advanced MISFETs.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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