Drain-Induced Barrier Lowering in Oxide Semiconductor Thin-Film Transistors With Asymmetrical Local Density of States

Abstract

Asymmetrical electrical properties induced by local acceptor-like defect states in oxide semiconductor thin-film transistors are investigated. In addition, we report on the origin of asymmetrical transport characteristics depending on the drain voltage level. In particular, we observe that these asymmetrical properties depend strongly on this level. Numerical calculations demonstrate that potential barrier lowering in the local area occurs at the drain electrode's edge.

Keywords

• Oxide semiconductor
• InGaZnOx
• asymmetrical local defect
• barrier lowering
• TCAD