Strain-modulated anomalous circular photogalvanic effect in p-type GaAs

Xiaolin Zeng; Jing Wu; Shenbo Zhu; Yu Liu; Yang Zhang; Yuan Li; Yonghai Chen

doi:10.1088/1367-2630/ad1a2b

New Journal of Physics (Jan 2024)

Strain-modulated anomalous circular photogalvanic effect in p-type GaAs

Xiaolin Zeng,
Jing Wu,
Shenbo Zhu,
Yu Liu,
Yang Zhang,
Yuan Li,
Yonghai Chen

Affiliations

Xiaolin Zeng: Chinese Academy of Sciences, Institute of Semiconductors, Key Laboratory of Semiconductor Materials Science , Beijing 100083, People’s Republic of China; University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering , Beijing 100049, People’s Republic of China
Jing Wu: Chinese Academy of Sciences, Institute of Semiconductors, Key Laboratory of Semiconductor Materials Science , Beijing 100083, People’s Republic of China; University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering , Beijing 100049, People’s Republic of China
Shenbo Zhu: Chinese Academy of Sciences, Institute of Semiconductors, Key Laboratory of Semiconductor Materials Science , Beijing 100083, People’s Republic of China; University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering , Beijing 100049, People’s Republic of China
Yu Liu: Chinese Academy of Sciences, Institute of Semiconductors, Key Laboratory of Semiconductor Materials Science , Beijing 100083, People’s Republic of China; University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering , Beijing 100049, People’s Republic of China
Yang Zhang: Chinese Academy of Sciences, Institute of Semiconductors, Key Laboratory of Semiconductor Materials Science , Beijing 100083, People’s Republic of China; China University of Mining and Technology, School of Materials Science and Physics , Xuzhou, Jiangsu 221116, People’s Republic of China
Yuan Li: Chinese Academy of Sciences, Institute of Semiconductors, Key Laboratory of Semiconductor Materials Science , Beijing 100083, People’s Republic of China; University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering , Beijing 100049, People’s Republic of China
Yonghai Chen: Chinese Academy of Sciences, Institute of Semiconductors, Key Laboratory of Semiconductor Materials Science , Beijing 100083, People’s Republic of China; University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering , Beijing 100049, People’s Republic of China

DOI: https://doi.org/10.1088/1367-2630/ad1a2b
Journal volume & issue: Vol. 26, no. 1
p. 013023

Abstract

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The influence of spatial strain distribution on the anomalous circular photogalvanic effect (ACPGE) is investigated in the p-type GaAs material. By tuning the position of exerted stress, it is experimentally observed that the uniform strain related ACPGE behaves like the sine function, which resembles the non-strain situation. Whereas the gradient strain related ACPGE shows the unimodal function line shape. To explain the observations, a new theoretical model is constructed based on spin splitting of energy bands. It is demonstrated that the ACPGE could purely derive from the spin splitting effect. Besides, the combination effect of spin splitting and inverse spin Hall effect on the ACPGE is also investigated. This work reveals the importance of bands spin splitting on ACPGE, which has not been considered before.

Published in New Journal of Physics

ISSN: 1367-2630 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Science: Physics
Website: https://iopscience.iop.org/journal/1367-2630

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