Reduction of Low Frequency Noise of Buried Channel PMOSFETs With Retrograde Counter Doping Profiles

Shuntaro Fujii; Toshiro Sakamoto; Soichi Morita; Tsutomu Miyazaki

doi:10.1109/JEDS.2024.3430308

IEEE Journal of the Electron Devices Society (Jan 2024)

Reduction of Low Frequency Noise of Buried Channel PMOSFETs With Retrograde Counter Doping Profiles

Shuntaro Fujii,
Toshiro Sakamoto,
Soichi Morita,
Tsutomu Miyazaki

Affiliations

Shuntaro Fujii: ORCiD; Product Platform Technology Group, Asahi Kasei Microdevices Corporation, Yokohama, Kanagawa, Japan
Toshiro Sakamoto: ORCiD; Device & Process Application Development Unit, Asahi Kasei Microdevices Corporation, Yokohama, Kanagawa, Japan
Soichi Morita: ORCiD; Procurement Department, Asahi Kasei Microdevices Corporation, Chiyoda-ku, Tokyo, Japan
Tsutomu Miyazaki: ORCiD; Quality Management Department, Asahi Kasei Microdevices Corporation, Nobeoka, Miyazaki, Japan

DOI: https://doi.org/10.1109/JEDS.2024.3430308
Journal volume & issue: Vol. 12
pp. 534 – 540

Abstract

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The impacts of retrograde counter doping (RCD) profiles on low frequency noise (LFN) of buried channel (BC) PMOSFETs were investigated. RCD profiles were formed using heavy ion implantation. The RCD profile reduced LFN by more than 50%. The origin of LFN reduction in the RCD device was investigated using TCAD simulation. It was found that both RCD profile itself and the polarity of Si surface contributed to the deeper channel position and larger energy barrier between Si surface and channel position.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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