Realization of Synapse Behaviors Based on Memristor and Simulation Study With KMC Method

Abstract

The memristor, emulating biological synapse, is recognized as one key way to overcome the classic von Neumann bottleneck. In this work, by using active metal Cu as electrode, the device of Cu/GeTeOx/TiN exhibited typical resistive switching characteristic based on the electrochemical metallization mechanism (ECM). Moreover, it realized gradual potentiating and depressing conduction under DC and AC modes, which lead to emulating excitation and inhibition of biological synapses. According to these properties, spike-timing-dependent plasticity (STDP) learning rule was reproduced by applying appropriate pulse sequences. Furthermore, the kinetic Monte Carlo method was utilized to analyze and provide further demonstration for the behaviors of gradual change. These indicated that the device had great potential applied in the neuromorphic computing systems and the properties could be commonly realized by ECM mechanism.

Keywords

• Electrochemical metallization mechanism
• conductive filament
• memristor
• spike-timing-dependent plasticity
• kinetic Monte Carlo