Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method

Lun-Chun Chen; Hung-Bin Chen; Yu-Shuo Chang; Shih-Han Lin; Ming-Hung Han; Jia-Jiun Wu; Mu-Shih Yeh; Yu-Ru Lin; Yung-Chun Wu

doi:10.1109/JEDS.2018.2886446

IEEE Journal of the Electron Devices Society (Jan 2019)

Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method

Lun-Chun Chen,
Hung-Bin Chen,
Yu-Shuo Chang,
Shih-Han Lin,
Ming-Hung Han,
Jia-Jiun Wu,
Mu-Shih Yeh,
Yu-Ru Lin,
Yung-Chun Wu

Affiliations

Lun-Chun Chen: Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan
Hung-Bin Chen: Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan
Yu-Shuo Chang: Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan
Shih-Han Lin: Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan
Ming-Hung Han: Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan
Jia-Jiun Wu: Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan
Mu-Shih Yeh: National Nano Device Laboratories, National Applied Research Laboratories, Hsinchu, Taiwan
Yu-Ru Lin: Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan
Yung-Chun Wu: ORCiD; Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan

DOI: https://doi.org/10.1109/JEDS.2018.2886446
Journal volume & issue: Vol. 7
pp. 168 – 173

Abstract

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A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for programming data in the p-type GAA nanosheet TFT NVM because the GAA nanosheet structure enhances the source-to-drain component of the electric field in its channel. Therefore, the enhanced electric field of the BBHE phenomenon creates energetic electrons that surmount the tunneling oxide barrier easily and pass shallow traps in the charge trapping layer of the GAA TFT NVM. Consequently, the p-type GAA TFT NVM achieves low-voltage programming bias and satisfactory data retention

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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