The Simulation Study of the SOI Trench LDMOS With Lateral Super Junction

Abstract

A novel lateral double diffused metal oxide semiconductor (LDMOS) with trench oxide layer, featuring a lateral super junction structure based on the silicon-on-insulator technology is proposed. On the one hand, the lateral super junction combined with the TOL can enhance both the surface and the bulk electric field of the N-drift by the charge compensation. Thus, the breakdown voltage (BV) is improved. On the other hand, the N-Pillar of the lateral super junction provides another current channel for electrons at the forward conduction state, thus the Specific on resistance (Ron,sp) is decreased. As the simulation results show, the proposed LDMOS exhibits trapezoidal electric field distribution with BV of 422V, and double electron channels with Ron,sp of 30.7 mΩ·cm2, thus the figure of merit (FOM) (FOM = BV2/Ron,sp, Baliga's FOM) of 5.82 MW/cm2 is achieved, breaking through the silicon limit.

Keywords

• Lateral double diffused metal oxide semiconductor (LDMOS)
• breakdown voltage (BV)
• specific on resistance (Ron,sp)
• Baliga’s figure of merit (FOM)