Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode

Panni Wang; Yihan Chen; Suwen Li; Salahuddin Raju; Longyan Wang; Lining Zhang; Xinnan Lin; Zhitang Song; Mansun Chan

doi:10.1109/JEDS.2017.2734858

IEEE Journal of the Electron Devices Society (Jan 2017)

Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode

Panni Wang,
Yihan Chen,
Suwen Li,
Salahuddin Raju,
Longyan Wang,
Lining Zhang,
Xinnan Lin,
Zhitang Song,
Mansun Chan

Affiliations

Panni Wang: ORCiD; Hong Kong University of Science and Technology, Hong Kong
Yihan Chen: Hong Kong University of Science and Technology, Hong Kong
Suwen Li: Hong Kong University of Science and Technology, Hong Kong
Salahuddin Raju: ORCiD; Hong Kong University of Science and Technology, Hong Kong
Longyan Wang: Hong Kong University of Science and Technology, Hong Kong
Lining Zhang: Hong Kong University of Science and Technology, Hong Kong
Xinnan Lin: Shenzhen Key Lab of Advanced Electron Device and Integration, School of Electronic and Computer Engineering, Peking University of Shenzhen Graduate School, Shenzhen, China
Zhitang Song: State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shenzhen, China
Mansun Chan: Hong Kong University of Science and Technology, Hong Kong

DOI: https://doi.org/10.1109/JEDS.2017.2734858
Journal volume & issue: Vol. 5, no. 5
pp. 362 – 366

Abstract

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Phase change memory (PCM) formed by Ge2Sb2Te5 (GST) on vertical carbon nanotube (CNT) filled contact plug is demonstrated in this paper. In order to achieve compatibility with the underlying process, the CNTs are synthesized using nickel catalyst at a low temperature. Reasonable contact characteristics between the CNTs and GST are achieved without material compatibility problem. Due to the small contact size of the CNT to the phase change material, a significant reduction in programming power is achieved compared to metal contact at the same via size. The temperature simulation result shows that the CNT filled via helps to reduce the programming area. The fabricated PCM on CNT filled via is able to endure more than 104 SET/RESET cycles without observable degradation.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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