Extraction and Estimation of Pinned Photodiode Capacitance in CMOS Image Sensors

Calvin Yi-Ping Chao; Yi-Che Chen; Kuo-Yu Chou; Jhy-Jyi Sze; Fu-Lung Hsueh; Shou-Gwo Wuu

doi:10.1109/JEDS.2014.2318060

IEEE Journal of the Electron Devices Society (Jan 2014)

Extraction and Estimation of Pinned Photodiode Capacitance in CMOS Image Sensors

Calvin Yi-Ping Chao,
Yi-Che Chen,
Kuo-Yu Chou,
Jhy-Jyi Sze,
Fu-Lung Hsueh,
Shou-Gwo Wuu

Affiliations

Calvin Yi-Ping Chao: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
Yi-Che Chen: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
Kuo-Yu Chou: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
Jhy-Jyi Sze: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
Fu-Lung Hsueh: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
Shou-Gwo Wuu: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan

DOI: https://doi.org/10.1109/JEDS.2014.2318060
Journal volume & issue: Vol. 2, no. 4
pp. 59 – 64

Abstract

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The pinned photodiode capacitance extraction method proposed by Goiffon et al. is discussed, and two additional new methods are presented and analyzed; one based on the full well dependence on photon flux and the other based on the full well dependence on transfer-gate off-voltage.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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