Effects of Al2O3 Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors

H. M. Zheng; J. Gao; S. M. Sun; Q. Ma; Y. P. Wang; B. Zhu; W. J. Liu; H. L. Lu; S. J. Ding; David W. Zhang

doi:10.1109/JEDS.2018.2804481

IEEE Journal of the Electron Devices Society (Jan 2018)

Effects of Al2O3 Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors

H. M. Zheng,
J. Gao,
S. M. Sun,
Q. Ma,
Y. P. Wang,
B. Zhu,
W. J. Liu,
H. L. Lu,
S. J. Ding,
David W. Zhang

Affiliations

H. M. Zheng: ORCiD; State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai, China
J. Gao: State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai, China
S. M. Sun: State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai, China
Q. Ma: State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai, China
Y. P. Wang: State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai, China
B. Zhu: State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai, China
W. J. Liu: ORCiD; State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai, China
H. L. Lu: ORCiD; State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai, China
S. J. Ding: ORCiD; State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai, China
David W. Zhang: State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai, China

DOI: https://doi.org/10.1109/JEDS.2018.2804481
Journal volume & issue: Vol. 6
pp. 320 – 324

Abstract

Read online

Ambient instability has been proven challenging in black phosphorus field-effect transistors (BP FETs) and a capping layer is thus needed for their practical applications. In this paper, we have examined the effects of Al2O3 capping and O2 post-annealing on the conduction characteristic of BP FETs. With the Al2O3 capping, it forms p-type into ambipolar transport and the electron mobility dramatically increases to 20-110 cm2/V·s in our case. Interestingly, with the O2 post-annealing, the transport can be tuned from ambipolar back to p-type as the annealing time extends. It is attributed that the Al2O3 capping introduces an n-type doping in BP channel while the O2 post-annealing dopes BP back into p-type. Moreover, after the O2 post-annealing the interfacial POx might be formed, resulting in the degradation of subthreshold swing and on/off current ratio.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

About the journal

Abstract

Keywords