P-Type Tunnel FETs With Triple Heterojunctions

Jun Z. Huang; Pengyu Long; Michael Povolotskyi; Gerhard Klimeck; Mark J. W. Rodwell

doi:10.1109/JEDS.2016.2614915

IEEE Journal of the Electron Devices Society (Jan 2016)

P-Type Tunnel FETs With Triple Heterojunctions

Jun Z. Huang,
Pengyu Long,
Michael Povolotskyi,
Gerhard Klimeck,
Mark J. W. Rodwell

Affiliations

Jun Z. Huang: ORCiD; Network for Computational Nanotechnology and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
Pengyu Long: Network for Computational Nanotechnology and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
Michael Povolotskyi: Network for Computational Nanotechnology and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
Gerhard Klimeck: Network for Computational Nanotechnology and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
Mark J. W. Rodwell: Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA

DOI: https://doi.org/10.1109/JEDS.2016.2614915
Journal volume & issue: Vol. 4, no. 6
pp. 410 – 415

Abstract

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A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb heterojunction (HJ) tunnel FETs. Atomistic quantum transport simulations show, that the added two HJs (AlInAsSb/InAs in the source and GaSb/AlSb in the channel) significantly shorten the tunnel distance and create two resonant states, greatly improving the ON state tunneling probability. Moreover, the source Fermi degeneracy is reduced by the increased source (AlInAsSb) density of states and the OFF state leakage is reduced by the heavier channel (AlSb) hole effective masses. With VDD = 0.3V and IOFF = 1nA/μm, ballistic ION of 606μA/μm (492μA/μm) is obtained at 30nm (15nm) channel length, which is comparable to n-type 3HJ counterpart and significantly exceeding p-type silicon MOSFET. Simultaneously, the nonlinear turn on and delayed saturation in the output characteristics are also greatly improved.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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