An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications

Abstract

This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at elevated temperatures. Modifications to the standard ASM-HEMT were developed to accurately capture the DC and RF measurements collected at varying chuck temperatures. Several results are reported which validate the model including DC-IV, pulsed-IV, scattering-parameter, and load-pull measurements. The model is then used to extrapolate the performance of the GaN HEMT to twice the operating temperature at which the model was validated. This work could be useful for understanding and modeling GaN HEMTs in high-temperature environment applications.

Keywords

• Gallium nitride
• high electron mobility transistor
• high temperature
• ASM-HEMT
• load pull