IEEE Journal of the Electron Devices Society (Jan 2020)

Under-FET Thermal Sensor Enabling Smart Full-Chip Run-Time Thermal Management

  • Cheng Li,
  • Qi Chen,
  • Feilong Zhang,
  • Mengfu Di,
  • Zijin Pan,
  • Fei Lu,
  • Albert Wang

DOI
https://doi.org/10.1109/JEDS.2020.3022730
Journal volume & issue
Vol. 8
pp. 1242 – 1248

Abstract

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This article reports design, fabrication and analysis of a novel under-transistor (under-FET) in-hole thermal sensor diode structure. Being able to accurately monitor self-heating of individual transistor in-operando, the under-FET temperature sensor enables smart full-chip run-time thermal management with spatial resolution down to single transistor level. The in-hole thermal sensors were fabricated in a CMOS process and validated in measurements. The new chip level thermal management technique was demonstrated using a prototype power amplifier (PA) IC designed in a foundry 40nm CMOS. It opens a door for self-learning based full-chip real-time intelligent thermal management for future ICs.

Keywords