A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance

Abstract

A promising approach to advance electronics beyond static operations is to enhance state-ofthe- art systems by the functional diversification of transistors. Here, we experimentally demonstrate that an ultra-thin Ge channel implemented on a Si on insulator platform enables run-time switchable symmetric pand n-type field-effect transistor operability as well as the prominent feature of distinct room-temperature negative differential resistance. Temperature dependent bias spectroscopy is utilized to map electronic transport in these so called negative differential resistance mode reconfigurable transistors. Thereof, a profound understanding of the involved transport physics and electrostatic gating mechanisms is obtained and evaluated. Further, we show that a multi-gate negative differential resistance reconfigurable transistor can effectively replace a cascode of negative differential resistance devices, contributing to a smaller area footprint, and reduced latency of critical paths. Notably, the experimentally obtained multi-heterojunction transistors constitute the first chip-scale platform that combines efficient polarity control as well as sizeand energy-efficient room-temperature negative differential resistance, providing an inherent component of emerging neuromorphic computing.

Keywords

• Germanium
• metal-semiconductor heterojunction
• reconfigurable transistor
• negative differential resistance