Proposal of Physics-Based Equivalent Circuit of Pseudo-MOS Capacitor Structure for Impedance Spectroscopy

Abstract

This paper proposes a detailed equivalent circuit of the pseudo-MOS capacitor structure and subjects it to impedance spectroscopy. We find, using Cole–Cole plots, that three resistance components, which correspond to interface traps, contact resistance, and bulk traps created near the contact, are observed in measurements of a silicon-on-insulator wafer. The simulation results gained from the detailed equivalent circuit proposed here well match the measurement results over the wide frequency range examined.

Keywords

• silicon-on-insulator (SOI)
• pseudo-MOSFET
• Impedance Spectroscopy
• Cole-Cole plot