IEEE Journal of the Electron Devices Society (Jan 2013)

A Flexible 0.18 <formula formulatype="inline"><tex Notation="TeX">$\mu{\rm m}$</tex> </formula> BiCMOS Technology Suitable for Various Applications

  • Takashi Hashimoto,
  • Yusuke Nonaka,
  • Tatsuya Tominari,
  • Tsuyoshi Fujiwara,
  • Tsutomu Udo,
  • Hidenori Satoh,
  • Kunihiko Watanabe,
  • Tomoko Jimbo,
  • Hiromi Shimamoto,
  • Satoru Isomura

DOI
https://doi.org/10.1109/JEDS.2013.2294202
Journal volume & issue
Vol. 1, no. 11
pp. 181 – 190

Abstract

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Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance. The BiCMOS process is divided into blocks, and the ordering of their processing is optimized so that they do not interfere with each other. Low-thermal-budget SiGe HBT formation is achieved using a minimal-moisture-desorption oxide layer, thereby avoiding disturbing the CMOS process. This technology, which can also be applied to the 0.13 μm generation, has been used for applications ranging from high-speed ones like automotive radar and 40 Gbps optical communication to consumer ones like wireless.

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