Dynamic Switching Characteristics of 1 A Forward Current <inline-formula> <tex-math notation="LaTeX">$\boldsymbol{\beta}$ </tex-math></inline-formula>-Ga2O3 Rectifiers

Jiancheng Yang; Fan Ren; Yen-Ting Chen; Yu-Te Liao; Chin-Wei Chang; Jenshan Lin; Marko J. Tadjer; S. J. Pearton; Akito Kuramata

doi:10.1109/JEDS.2018.2877495

IEEE Journal of the Electron Devices Society (Jan 2019)

Dynamic Switching Characteristics of 1 A Forward Current <inline-formula> <tex-math notation="LaTeX">$\boldsymbol{\beta}$ </tex-math></inline-formula>-Ga2O3 Rectifiers

Jiancheng Yang,
Fan Ren,
Yen-Ting Chen,
Yu-Te Liao,
Chin-Wei Chang,
Jenshan Lin,
Marko J. Tadjer,
S. J. Pearton,
Akito Kuramata

Affiliations

Jiancheng Yang: ORCiD; Department of Chemical Engineering, University of Florida, Gainesville, FL, USA
Fan Ren: Department of Chemical Engineering, University of Florida, Gainesville, FL, USA
Yen-Ting Chen: Department of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, Taiwan
Yu-Te Liao: ORCiD; Department of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, Taiwan
Chin-Wei Chang: Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, USA
Jenshan Lin: ORCiD; Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, USA
Marko J. Tadjer: ORCiD; Power Electronics Section, Naval Research Laboratory, Washington, DC, USA
S. J. Pearton: ORCiD; Department of Materials Science and Engineering, University of Florida, Gainesville, FL, USA
Akito Kuramata: Crystal Growth Division, Tamura Corporation and Novel Crystal Technology, Inc., Saitama, Japan

DOI: https://doi.org/10.1109/JEDS.2018.2877495
Journal volume & issue: Vol. 7
pp. 57 – 61

Abstract

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An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85 × 10-3cm2 area) and an absolute forward current of 1 A on 8 μm thick epitaxial ß-Ga2O3 drift layers. The recovery characteristics for these vertical geometry ß-Ga2O3 Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of -300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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